GB/T 43493.1-2023半导体器件功率器件用碳化硅同质外延片缺陷的无损检测识别判据第1部分:缺陷分类国家标准
英文:Semiconductor device—Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power...
英文:Semiconductor device—Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power...