GB/T 43493.3-2023半导体器件功率器件用碳化硅同质外延片缺陷的无损检测识别判据第3部分:缺陷的光致发光检测方法国家标准
英文:Semiconductor device—Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power...
英文:Semiconductor device—Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power...
英文:Semiconductor device—Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power...
英文:Semiconductor device—Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power...
英文:Micro-electromechanical systems technology(MEMS) —Description and measurement methods for micro trench and pyramidal ...
英文:Semiconductor devices—Micro-electromechanical devices—Wafer to wafer bonding strength measurement GB/T 41853-2022介绍: ...
英文:Semiconductor devices—Micro-electromechanical devices—Bend-and shear-type test methods of measuring adhesive strength...
英文:Semiconductor devices—Micro-electromechanical devices—Generic specification for MEMS GB/T 32817-2016介绍: 国家标准《半导体器件 微机...